AOS Launches Gen3 1200V αSiC MOSFETs for High-Efficiency Power

Sunnyvale, United States- Alpha and Omega Semiconductor Limited (AOS)., a prominent designer, developer, and supplier of a broad range of discrete power devices, wide bandgap power devices, power management ICs, and modules, has introduced its next-generation (Gen3) 1200V αSiC MOSFETs. These advanced devices are specifically designed to improve efficiency in high-power applications, addressing the rising demands of industries like electric vehicles (EVs), AI data centers, and renewable energy systems.

The new Gen3 MOSFETs deliver up to 30% better switching figure-of-merit (FOM) compared to the previous generation, while maintaining low conduction losses at high-load conditions. Despite these performance improvements, the devices do not compromise on ruggedness or reliability. They are fully AEC-Q101 qualified, offering extended lifetime and HV-H3TRB compliance for enhanced durability and operational stability.

As power demands continue to increase in sectors such as EVs, AI data centers, and renewable energy, the need for efficient power conversion becomes more critical. In the context of electric vehicles, AOS' Gen3 MOSFETs enable engineers to create systems with higher power density, improved efficiency, and reduced battery consumption, ultimately extending vehicle range. Additionally, AI data centers adopting high-voltage DC (HVDC) architectures, such as 800V or ±400V, will benefit from reduced losses and greater power density, enabling them to meet growing power requirements.

The Gen3 1200V MOSFETs are available with an on-resistance (Rds(on)) range from 15mOhm (AOM015V120X3Q) to 40mOhm (AOM040V120X3Q) in a TO27-4L package. AOS also plans to roll out additional surface mount, topside cooled packages, and case modules. Furthermore, a larger Gen3 1200V/11mOhm MOSFET die has been developed for high-power EV traction inverter modules, with wafer sales already available.

The new Gen3 1200V αSiC MOSFETs from AOS are AEC-Q101 qualified, ensuring automotive-grade reliability. They offer wide gate drive voltage compatibility (+15V to +18V) and deliver up to 30% improved switching FOM for better efficiency. With extended HV-H3TRB compliance and enhanced UIS and Short Circuit Capability, they’re built for demanding, high-voltage environments, making them ideal for EVs and data centers.

Mr. David Sheridan, Vice President of Wide Bandgap products at AOS, said, “Electric vehicles and AI are transforming industries, but they require advanced power systems that can maintain efficiency even as energy demands increases. We’re excited that this next generation of AOS αSiC MOSFETs can deliver the performance our customers require while making a positive environmental impact.”